Feasibility, Accuracy, and Performance of Contact Block Reduction Method for Multi-band Simulations of Ballistic Quantum Transport
نویسندگان
چکیده
Related Articles Correlating stress generation and sheet resistance in InAlN/GaN nanoribbon high electron mobility transistors Appl. Phys. Lett. 101, 113101 (2012) Nonmagnetic spin-field-effect transistor Appl. Phys. Lett. 101, 082407 (2012) Charge dynamics of a single donor coupled to a few-electron quantum dot in silicon Appl. Phys. Lett. 100, 213107 (2012) Threshold voltage modulation mechanism of AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors with fluorinated Al2O3 as gate dielectrics Appl. Phys. Lett. 100, 133507 (2012) Contacts shielding in nanowire field effect transistors J. Appl. Phys. 111, 064301 (2012)
منابع مشابه
Performance evaluation of Carbon nanotube junctionless tunneling field effect transistor (CNT-JLTFET) under torsional strain: A quantum simulation study
In this paper, the performance of a CNT-JLTFET under different values of torsional strains of 0, 3, and 5 degrees has been investigated. Simulation has been carried out using non-equilibrium Green’s function (NEGF) formalism in the mode-space approach and in the ballistic limit. The simulation results indicate that, under torsional strain, an increase occurs in the energy band-gap, and thus the...
متن کاملContact Block Reduction Method for Ballistic Quantum Transport with Semi-empirical sp3d5s* Tight Binding band models
The utility of the Contact Block Reduction method (CBR) to find the retarded Green’s function for ballistic quantum devices with semi-empirical tight binding band (TB) models is discussed. This work shows that the original method needs several modifications to be used with TB models. In the common case where two contacts are used for transport in quantum wires, our approach computes the transmi...
متن کاملConductance in quantum wires by three quantum dots arrays
A noninteracting quantum-dot arrays side coupled to a quantum wire is studied. Transport through the quantum wire is investigated by using a noninteracting Anderson tunneling Hamiltonian. The conductance at zero temperature develops an oscillating band with resonances and antiresonances due to constructive and destructive interference in the ballistic channel, respectively. Moreover, we have fo...
متن کاملConductance in quantum wires by three quantum dots arrays
A noninteracting quantum-dot arrays side coupled to a quantum wire is studied. Transport through the quantum wire is investigated by using a noninteracting Anderson tunneling Hamiltonian. The conductance at zero temperature develops an oscillating band with resonances and antiresonances due to constructive and destructive interference in the ballistic channel, respectively. Moreover, we have fo...
متن کاملThe Ballistic Nanotransistor: A Simulation Study
Future MOS transistors may operate near their ballistic limits [1], so it is important to understand ballistic device physics and the prospects for achieving quasi-ballistic operation. In this paper, we explore the device design and physics issues of MOSFETs at the scaling limits using semiclassical and full quantum simulations. The device we presume is a double-gate (DG) MOSFET with symmetrica...
متن کامل